IRF840 Datasheet PDF - STMicroelectronics
Part Number | IRF840 | |
Description | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
It is an N-channel MOSFET, which means that it is controlled by a voltage applied to the gate terminal and can switch high current loads on and off. It has a maximum drain-source voltage rating of 500 volts and a maximum continuous drain current rating of 8 amps. It has a low on-resistance, which allows for efficient power transfer and low power dissipation. Advantages of the IRF840 1. High voltage and current ratings 2. Low on-resistance 3. Suitable for high-power switching applications 4. TO-220 package is a common form factor for high-power transistors Disadvantages: 1. Relatively slow switching speeds 2. Can introduce noise into the system 3. Proper heatsinking and thermal management are necessary to prevent damage due to excessive heat buildup There is a preview and IRF840 download ( pdf file ) link at the bottom of this page. Total 8 Pages |
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N - CHANNEL 500V - 0.75Ω - 8A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF840
500 V < 0.85 Ω
8A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
8.0
5.1
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
32
125
Derating Factor
1.0
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 8A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/8
|
|
Normalized Gate Threshold Voltage vs
Temperature
IRF840
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF840 electronic component. |
Information | Total 8 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. 500V, 8A, MOSFET - STMicro [ Learn More ] | |
Download | [ IRF840.PDF Datasheet ] |
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