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What is IRF840?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET".


IRF840 Datasheet PDF - STMicroelectronics

Part Number IRF840
Description N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 

It is an N-channel MOSFET, which means that it is controlled by a voltage applied to the gate terminal and can switch high current loads on and off.

It has a maximum drain-source voltage rating of 500 volts and a maximum continuous drain current rating of 8 amps.

It has a low on-resistance, which allows for efficient power transfer and low power dissipation.

Advantages of the IRF840

1. High voltage and current ratings
2. Low on-resistance
3. Suitable for high-power switching applications
4. TO-220 package is a common form factor for high-power transistors

Disadvantages:

1. Relatively slow switching speeds
2. Can introduce noise into the system
3. Proper heatsinking and thermal management are necessary to prevent damage due to excessive heat buildup


There is a preview and IRF840 download ( pdf file ) link at the bottom of this page.





Total 8 Pages



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No Preview Available ! IRF840 datasheet, circuit

® IRF840
N - CHANNEL 500V - 0.75- 8A - TO-220
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
IRF840
500 V < 0.85
8A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
8.0
5.1
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
32
125
Derating Factor
1.0
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area
(1) ISD 8A, di/dt 100 A/µs, VDD V(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/8

line_dark_gray
IRF840 equivalent
Normalized Gate Threshold Voltage vs
Temperature
IRF840
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8


line_dark_gray

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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF840 electronic component.


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IRF840 datasheet


1. 500V, 8A, MOSFET - STMicro

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