IRF840 Datasheet PDF - NXP Semiconductors
| Part Number | IRF840 | |
| Description | 8A, 500V, N-Channel MOSFET, Transistor | |
| Manufacturers | NXP Semiconductors | |
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The IRF840 is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) that is commonly used in high-power switching applications. Features : 1. It is an N-channel MOSFET, which means that it is controlled by a voltage applied to the gate terminal and can switch high current loads on and off. 2. It has a low on-resistance, which allows for efficient power transfer and low power dissipation. FAQ 1: Can the IRF840 be used in low-power applications? Answer: While the IRF840 is designed for high-power switching applications, it can be used in low-power applications as well. However, its high on-resistance and relatively slow switching speeds may make it less suitable for precise switching or low noise applications. There is a preview and IRF840 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF840
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 8.5 A
RDS(ON) ≤ 0.85 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF840 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 7.4 A;
tp = 0.22 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 8.5 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
531
13
8.5
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
March 1999
1
Rev 1.000
|
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Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF840
Gate-source voltage, VGS (V)
15
14 ID = 8.5A
13
12
Tj = 25 C
11
10 100V
9
8
7
6
5
4
3
2
1
0
200V
PHP8N50E
VDD = 400 V
0 20 40 60 80
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Switching times (ns)
1000
VDD = 250 V
VGS = 10 V
RD = 30 Ohms
Tj = 25 C
PHP8N50
100 td(off)
tf
tr
td(on)
10
0 10 20 30 40 50 60
RG, Gate resistance (Ohms)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
20 IF, Source-Drain diode current (Amps)
VGS = 0 V
15
PHP8N50
10
150 C
Tj = 25 C
5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSDS, Source-Drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Non-repetitive Avalanche current, IAS (A)
10
25 C
Tj prior to avalanche = 125 C
1
VDS
ID
0.1
1E-06
tp
PHP8N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
10
Tj prior to avalanche = 25 C
1 125 C
0.1
0.01
1E-06
PHP8N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
March 1999
5
Rev 1.000
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF840 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. 500V, 8A, MOSFET - STMicro [ Learn More ] | |
| Download | [ IRF840.PDF Datasheet ] | |
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