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IRF7413 Datasheet PDF - International Rectifier

Part Number IRF7413
Description Power MOSFET(Vdss=30V/ Id=12A)
Manufacturers International Rectifier 
Logo International Rectifier Logo 



Preview ( 8 pages )
		
IRF7413 datasheet, circuit
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
30V
PD- 91330F
IRF7413
HEXFET® Power MOSFET
RDS(on) max(mW) ID
11@VGS = 10V 12A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
12
9.6
96
2.5
0.02
± 20
1.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
3/19/02

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1 page
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IRF7413 equivalent
IRF7413
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5

5 Page
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Information Total 8 Pages
Download[ IRF7413.PDF Datasheet ]

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