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What is IRF640NL?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRF640NL Datasheet PDF - International Rectifier

Part Number IRF640NL
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 11 Pages



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l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
www.irf.com
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew„
PD - 94006A
IRF640N
IRF640NS
IRF640NL
HEXFET® Power MOSFET
D
VDSS = 200V
RDS(on) = 0.15
G
ID = 18A
S
TO-220AB
IRF640N
D2Pak
IRF640NS
TO-262
IRF640NL
Max.
18
13
72
150
1.0
± 20
247
18
15
8.1
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
1
10/08/04

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IRF640NL equivalent
20
20
16
16
12
12
8
8
4
4
0
0 25
25
50 75 100 125 150 175
50TCTC, C7, 5aCsaesTe1eT0me0mpeprea1rt2ua5rtuer(e°(C1°5)C0 ) 175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF640N/S/L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V+- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF640NL electronic component.


Information Total 11 Pages
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