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What is IRF540N?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "HEXFET Power MOSFET(Vdss=100V, Id=33A)".


IRF540N Datasheet PDF - International Rectifier

Part Number IRF540N
Description HEXFET Power MOSFET(Vdss=100V, Id=33A)
Manufacturers International Rectifier 
Logo International Rectifier Logo 

IRF540N is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in electronic circuits for switching and amplification applications.

It is an N-channel MOSFET with a voltage rating of 100V and a current rating of 33A. The IRF540N has a low on-resistance of 44mOhm, which allows it to handle high power and reduce power loss.

It is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is commonly used in electronic devices such as audio amplifiers, power supplies, and motor control circuits.


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No Preview Available ! IRF540N datasheet, circuit

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 91341B
IRF540N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 44m
ID = 33A
S
TO-220AB
Max.
33
23
110
130
0.87
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
1.15
–––
62
Units
°C/W
1
03/13/01

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IRF540N equivalent
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF540N
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

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1. N-ch, Power MOSFET - Fairchild

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