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What is IRF510?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel Power MOSFET / Transistor".


IRF510 Datasheet PDF - Fairchild Semiconductor

Part Number IRF510
Description N-Channel Power MOSFET / Transistor
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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Data Sheet
January 2002
IRF510
5.6A, 100V, 0.540 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
NOTE: When ordering, include the entire part number.
Features
• 5.6A, 100V
• rDS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF510 Rev. B

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IRF510 equivalent
IRF510
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS CDS + CGD
300
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200 CISS
COSS
100
0
1
CRSS
2 5 10 2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VDS 50V
TJ = 25oC
1.5
TJ = 175oC
1.0
0.5
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 175oC
1
TJ = 25oC
0.1
0 0.4 0.8 1.2 1.6 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.4A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRF510 Rev. B


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IRF510 datasheet


1. 100V, 5.6A, N-Ch, MOSFET, Transistor

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