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What is IRF4905?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)".


IRF4905 Datasheet PDF - International Rectifier

Part Number IRF4905
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.02
S ID = -74A
TO-220AB
Max.
-74
-52
-260
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

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IRF4905 equivalent
IRF4905
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1


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1. - Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

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IRF4905The function is P-Channel MOSFET Transistor. Inchange SemiconductorInchange Semiconductor
IRF4905The function is Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A). International RectifierInternational Rectifier
IRF4905LThe function is Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A). International RectifierInternational Rectifier

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