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What is IRF1404S?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)".


IRF1404S Datasheet PDF - International Rectifier

Part Number IRF1404S
Description Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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No Preview Available ! IRF1404S datasheet, circuit

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‡
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)*
www.irf.com
PD -93853C
IRF1404S
IRF1404L
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004
ID = 162A†
S
D2Pak
IRF1404S
TO-262
IRF1404L
Max.
162†
115†
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to +175
-55 to +175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
5/18/01

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IRF1404S equivalent
IRF1404S/L
200
LIMITED BY PACKAGE
160
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF1404S electronic component.


Information Total 10 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IRF1404The function is N-Channel MOSFET Transistor. Inchange SemiconductorInchange Semiconductor
IRF1404The function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier
IRF1404LThe function is Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A). International RectifierInternational Rectifier

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