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C1815 Datasheet PDF - Toshiba Semiconductor

Part Number C1815
Description Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB
50 mA
JEDEC
TO-92
Collector power dissipation
PC
400 mW
JEITA
SC-43
Junction temperature
Storage temperature range
Tj
Tstg
125
55~125www.DataSheet.co.kr
°C
°C
TOSHIBA
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
hFE (2)
VCE = 6 V, IC = 150 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
rbb’
VCE = 10 V, IE = −1 mA
f = 30 MHz
NF VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 10 kΩ
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
70 700
25 100
0.1 0.25 V
⎯ ⎯ 1.0 V
80 ⎯ ⎯ MHz
2.0 3.5 pF
50
Ω
1.0 10 dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/



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C1815 transistor datasheet


1. - 60V, 150mA, NPN Transistor

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