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PDF SI5915DC-T1 Data sheet ( Hoja de datos )

Número de pieza SI5915DC-T1
Descripción Dual P-Channel 1.8-V (G-S) MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo




1. SI5915DC-T1






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Si5915DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.070 @ VGS = --4.5 V
--8 0.108 @ VGS = --2.5 V
0.162 @ VGS = --1.8 V
1206-8 ChipFETt
1
S1
D1
D1
G1
S2
D2 G2
D2
Bottom View
Ordering Information: Si5915DC-T1
ID (A)
--4.6
--3.7
--3.0
FEATURES
D TrenchFETr Power MOSFET
D Low Thermal Resistance
D 40% Smaller Footprint Than TSOP-6
APPLICATIONS
D Load Switch or PA Switch for Portable
Devices
S1 S2
G1 G2
Marking Code
DE XX
Lot Traceability
and Date Code
Part # Code
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
--8
8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
--4.6 --3.4
--3.3 --2.5
--10
--1.8 --0.9
2.1 1.1
1.1 0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70693
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1

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