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K91G08Q0M Datasheet PDF - Samsung semiconductor

Part Number K91G08Q0M
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 



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K91G08Q0M datasheet, circuit
K817P/ K827PH/ K847PH
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The K817P/ K827PH/ K847PH consist of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in an 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
D Endstackable to 2.54 mm (0.1’) spacing
D DC isolation test voltage VIO = 5 kV
D Low coupling capacitance of typical 0.3 pF
D Current Transfer Ratio (CTR) selected into
groups
D Low temperature coefficient of CTR
D Wide ambient temperature range
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection
D Coupling System U
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
C
14925
Order Instruction
Ordering Code
K817P
K827PH
K847PH
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K827P8
K817P9
CTR Ranking
50 to 600%
50 to 600%
50 to 600%
40 to 80%
63 to 125%
100 to 200%
160 to 320%
50 to 150%
100 to 300%
80 to 160%
130 to 260%
200 to 400%
Remarks
4 Pin = Single channel
8 Pin = Dual channel
16 Pin = Quad channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
Rev. A2, 11–Jan–99
177

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K91G08Q0M equivalent
K817P/ K827PH/ K847PH
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
10000
1000
VCE=20V
IF=0
100
10
0
0 40 80 120
96 11700
Tamb – Ambient Temperature (
Figure 4.
Total
Powe°Cr
)
Dissipation
vs.
Ambient Temperature
1
0 25 50 75 100
95 11026
Tamb – Ambient Temperature ( °C )
Figure 7. Collector Dark Current vs.
Ambient Temperature
1000.0
100.0
100
VCE=5V
10
10.0 1
1.0
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
2.0
VCE=5V
IF=5mA
1.5
1.0
0.5
0
–25 0 25 50 75
95 11025
Tamb – Ambient Temperature ( °C )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
0.1
0.01
0.1
1
10 100
95 11027
IF – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
100
20mA
IF=50mA
10 10mA
5mA
1 2mA
1mA
0.1
0.1
1
10 100
95 10985
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
Rev. A2, 11–Jan–99
181

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Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionManufacturers
K91G08Q0MThe function is 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory.Samsung semiconductor
Samsung semiconductor

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