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What is K6X4008T1F-GQ70?

This electronic component, produced by the manufacturer "Samsung semiconductor", performs the same function as "512Kx8 bit Low Power and Low Voltage CMOS Static RAM".


K6X4008T1F-GQ70 Datasheet PDF - Samsung semiconductor

Part Number K6X4008T1F-GQ70
Description 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 


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K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Data
July 29, 2002
0.1 Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
October 14, 2002
0.2 Revised
- Added Commercial product
December 2, 2002
0.21
Revised
March 26, 2003
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
1.0 Finalized
- Changed ICC from 4mA to 2mA
- Changed ICC1 from 4mA to 3mA
- Changed ICC2 from 30mA to 25mA
- Changed ISB1(Commercial) from 15µA to 10µA
- Changed ISB1(industrial) from 20µA to 10µA
- Changed ISB1(Automotive) from 30µA to 20µA
- Changed IDR(Commercial) from 15µA to 10µA
- Changed IDR(industrial) from 20µA to 10µA
- Changed IDR(Automotive) from 30µA to 20µA
September 16, 2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2003

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K6X4008T1F-GQ70 equivalent
K6X4008T1F Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): CL=100pF+1TTL
CL1)=30pF+1TTL
1. 55ns, 70ns product
CL1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(VCC=2.7~3.6V, Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C, Automotive product: TA=-40 to 125°C)
Speed Bins
Parameter List
Symbol
55ns1)
70ns
85ns
Min Max Min Max Min Max
Read cycle time
tRC 55 - 70 - 85 -
Address access time
tAA - 55 - 70 - 85
Chip select to output
tCO - 55 - 70 - 85
Output enable to valid output
tOE - 25 - 35 -
40
Read Chip select to low-Z output
tLZ 10 - 10 - 10 -
Output enable to low-Z output tOLZ 5 - 5 - 5 -
Chip disable to high-Z output
tHZ 0 20 0 25 0 25
Output disable to high-Z output
tOHZ
0
20
0
25
0
25
Output hold from address change tOH
10
-
10
-
10
-
Write cycle time
tWC 55 - 70 - 85 -
Chip select to end of write
tCW 45 - 60 - 70 -
Address set-up time
tAS 0 - 0 - 0 -
Address valid to end of write
tAW 45 - 60 - 70 -
Write pulse width
Write
Write recovery time
tWP 40 - 55 - 55 -
tWR 0 - 0 - 0 -
Write to output high-Z
tWHZ
0
20
0
25
0
25
Data to write time overlap
tDW 25 - 30 - 35 -
Data hold from write time
tDH 0 - 0 - 0 -
End write to output low-Z
tOW 5 - 5 - 5 -
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR CSVcc-0.2V
K6X4008T1F-B
Data retention current
IDR Vcc=3.0V, CSVcc-0.2V K6X4008T1F-F
K6X4008T1F-Q
Data retention set-up time
Recovery time
tSDR
tRDR
See data retention waveform
1. Typical values are measured at TA = 25°C and not 100% tested.
Min Typ1) Max Unit
2.0 - 3.6 V
- 10 µA
- 0.5 10 µA
- 20 µA
0- -
ms
5- -
5 Revision 1.0
September 2003


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K6X4008T1F-GQ70 datasheet


1. 512Kx8 bit, CMOS Static RAM

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Featured Datasheets

Part NumberDescriptionMFRS
K6X4008T1F-GQ70The function is 512Kx8 bit Low Power and Low Voltage CMOS Static RAM. Samsung semiconductorSamsung semiconductor

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