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K4S561632A Datasheet PDF - Samsung semiconductor

Part Number K4S561632A
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Manufacturers Samsung semiconductor 
Logo Samsung semiconductor Logo 



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K4S561632A datasheet, circuit
K4S561632A
CMOS SDRAM
256Mbit SDRAM
4M x 16bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Sep. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Sep. 1999

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K4S561632A equivalent
K4S561632A
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC tRC(min)
IO = 0 mA
Version
Unit Note
-75 -80 -1H -1L
150 150 140 140 mA
1
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P CKE VIL(max), tCC = 10ns
ICC2PS CKE & CLK VIL(max), tCC =
ICC2N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
2
2
16
14
mA
mA
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE VIL(max), tCC = 10ns
ICC3PS CKE & CLK VIL(max), tCC =
ICC3N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
6
6
35
30
mA
mA
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
ICC4
ICC5
IO = 0 mA
Page burst
4banks Activated.
tCCD = 2CLKs
tRC tRC(min)
ICC6 CKE 0.2V
180 180 145 145 mA
1
210 210 200 200 mA
2
C 5 mA 3
L 2 mA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632A-TC**
4. K4S561632A-TL**
5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Rev. 0.0 Sep. 1999

5 Page
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Information Total 10 Pages
Download[ K4S561632A.PDF Datasheet ]

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