JDV2S02E Datasheet PDF - Toshiba Semiconductor
Part Number | JDV2S02E | |
Description | VCO for UHF band | |
Manufacturers | Toshiba Semiconductor | |
Logo | ||
There is a preview and JDV2S02E download ( pdf file ) link at the bottom of this page. Total 4 Pages |
Preview 1 page No Preview Available ! VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
· Small Package
· High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
· Low Series Resistance: rs = 0.60 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
125
-55~125
Unit
V
°C
°C
JDV2S02E
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
Min Typ. Max Unit
10 ¾ ¾
¾¾
3
1.8 2.05 2.3
0.83 1.03 1.23
1.8 2 ¾
¾ 0.6 0.8
V
nA
pF
¾
W
FB
1 2002-01-16
|
|
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for JDV2S02E electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ JDV2S02E.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
JDV2S02E | The function is VCO for UHF band. Toshiba Semiconductor | |
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