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What is JDP2S04E?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "VHF~UHF Band RF Attenuator Applications".


JDP2S04E Datasheet PDF - Toshiba Semiconductor

Part Number JDP2S04E
Description VHF~UHF Band RF Attenuator Applications
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S04E
VHF~UHF Band RF Attenuator Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low capacitance ratio: CT = 0.25 pF (typ.)
· Low series resistance: rs = 3 (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
50
50
125
-55~125
Unit
V
mA
°C
°C
JDP2S04E
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR IR = 10 mA
IR VR = 50 V
VF IF = 50 mA
CT VR = 50 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
50 ¾ ¾
¾ ¾ 0.1
¾ 0.95 1.0
¾ 0.25 0.4
¾ 3.0 ¾
V
mA
V
pF
W
1 2003-03-24


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for JDP2S04E electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
JDP2S04EThe function is VHF~UHF Band RF Attenuator Applications. Toshiba SemiconductorToshiba Semiconductor

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