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PDF ILH100 Data sheet ( Hoja de datos )
| Número de pieza | ILH100 | |
| Descripción | HERMETIC PHOTOTRANSISTOR OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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ILH100
HERMETIC PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Operating Temperature Range,
–55°C to +125°C
• Current Transfer Ratio Guaranteed from
–55°C to +100°C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Cur-
rent
• Isolation Test Voltage, 3000 VDC
• Base Lead Available for Transistor Biasing
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH100 is designed especially for hi-rel applica-
tions requiring optical isolation with high current
transfer ratio and low saturation VCE. Each opto-
coupler consists of a light emitting diode and a NPN
silicon phototransistor mounted and coupled in an 8
pin hermetically sealed DIP package. The ILH100's
low input current makes it well suited for direct
CMOS to LSTTL/TTL interfaces.
Dimensions in inches (mm)
.390±.005
(9.91±.13)
87 6 5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.300
(7.62)
typ.
.020 1 2
3
4 .150
(3.81)
(.51)
max.
min.
.010±.002
(.25±.05)
2
Anode
.018±.002
(.46±.05)
.100 ±.010
(2.54±.25)
.125
(3.18)
min.
Cathode 3
7
Base
6
Collector
5
Emitter
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current(1) ...................................................................... 1 A
Power Dissipation.........................................................................150 mW
Derate Linearly from 25°C ........................................................1.5 mW/°C
Detector
Collector–Emitter Voltage ...................................................................70 V
Emitter–Base Voltage ...........................................................................7 V
Collector–Base Voltage .....................................................................70 V
Continuous Collector Current ..........................................................50 mA
Power Dissipation.........................................................................300 mW
Derate Linearly from 25°C ........................................................3.0 mW/°C
Package
Input–Output Isolation Test Voltage(2) ..................................... 3000 VDC
Storage Temperature Range ..........................................–65°C to +150°C
Operating Temperature Range..........................................–55 to +125°C
Junction Temperature...................................................................... 150°C
Soldering Time at 240°C, 1.6 mm from case ................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25°C ........................................................3.5 mW/°C
Notes:
1. Values applies for PW≤1 ms, PRR£300 pps.
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. TA=25°C and duration=1 second, RH=45%.
5–1
1 page  
Figure 16. Normalized non-saturated and saturated HFE
at TA=70°C versus base current
1.5 Normalized to:
Ib = 20µA, Vce=10V
Ta=25°C
1.0
NHFE
Vce = 10V
0.5 NHFE(SAT)
Vce = 0.4V
0.0
1
10 100
Ib - Base Current - µA
1000
Figure 20. Propagation delay versus temperatureand
collector load resistance for IF=5 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
47KΩ tpLH
100
10KΩ tpLH
10
2.2KΩ tpHL
2.2KΩ tpLH
10KΩ tpHL
47KΩ tpHL
1
-50 -25 0 25 50 75 100 125
Ta - Ambient Temperature - °C
Figure 17. Collector-emitter leakage current versus
temperature
10 5
10 4
10 3
10 2
10 1
WORST
CASE
Vce = 10V
10 0
TYPICAL
10 -1
10
-2
-20
0 20 40 60 80 100
TaTa- -AAmmbbieienntt TTeemmppeeraratuturere- °-C°C
Figure 18. Base emitter voltagge versus base current
1000
100
Ta = 25°C
10
1
.1
.01
.001
0.4
0.5 0.6 0.7
Vbe - Base Emitter Voltage - V
0.8
Figure 19. Base emitter capacitance versus base emitter
voBltaagsee-emitter capacitance versus base-emitter voltage
10000
1000
100
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Vbe - Base Emitter Voltage - V
Figure 21. Propagation delay versus temperatureand
collector load resistance for IF=10 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
47KΩ tpLH
100
10KΩ tpLH
10
2.2KΩ tpHL
2.2KΩ tpLH
10KΩ tpHL
47KΩ tpHL
1
-50 -25 0 25 50 75 100 125
Ta - Ambient Temperature - °C
Figure 22. Propagation delay versus temperatureand
collector load resistance for IF=20 mA
1000
Vcc = 5.25V, Rbe = open, Vth = 1.5V
47KΩ tpLH
100 10KΩ tpLH
2.2KΩ tpLH
10
2.2KΩ tpHL
1
10KΩ tpHL
47KΩ tpHL
-50 -25 0 25 50 75 100 125
Ta - Ambient Temperature - °C
Figure 23. Propagation delay versus temperatureand
collector load resistance for IF=5 mA
30
Vcc = 5.25V, Rbe = 47KΩ, Vth = 1.5V
25 47KΩ tpLH
10KΩ tpLH
20 2.2KΩ tpLH
15 2.2KΩ tpHL
10
5
0
-50
10KΩ tpHL
47KΩ tpHL
-25 0 25 50 75 100
Ta - Ambient Temperature - °C
125
ILH100
5–5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ILH100.PDF ] | |
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