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What is JAN2001J?

This electronic component, produced by the manufacturer "Microsemi Corporation", performs the same function as "HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS".


JAN2001J Datasheet PDF - Microsemi Corporation

Part Number JAN2001J
Description HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Manufacturers Microsemi Corporation 
Logo Microsemi Corporation Logo 


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SG2000 SERIES
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
Seven npn Darlington pairs
-55°C to 125°C ambient operating temperature range
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
Available to MIL-STD-883 and DESC SMD
MIL-M38510/14101BEA - JAN2001J
MIL-M38510/14102BEA - JAN2002J
MIL-M38510/14103BEA - JAN2003J
MIL-M38510/14104BEA - JAN2004J
Radiation data available
LMI level "S" processing available
PARTIAL SCHEMATICS
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
1 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

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JAN2001J equivalent
ELECTRICAL CHARACTERISTICS (continued)
SG2021 thru SG2024
Parameter
Applicable
Devices
Temp.
Test Conditions
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
(IIN(OFF))
Input Voltage (VIN(ON))
D-C Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
All
SG2024
All
SG2023
SG2024
All
SG2023
SG2024
SG2021
All
All
All
All
All
TA = TMIN
TA = TMIN
T =T
A MIN
TA = 25°C
TA = 25°C
T = 25°C
A
TA = TMAX
TA = TMAX
T =T
A MAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = 25°C
VCE = 95V
V = 95V, V = 1V
CE IN
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
I
C
=
100mA,
I
B
=
350µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
I
C
=
100mA,
I
B
=
250µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
I
C
=
100mA,
I
B
=
250µA
VIN = 3.85V
VIN = 5V
V = 12V
IN
IC = 500µA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
0.5 EIN to 0.5 EOUT
0.5 EIN to 0.5 EOUT
VR = 95V
IF = 350mA
Note 3. These parameters, although guaranteed, are not tested in production.
SG2000 SERIES
Limits
Units
Min. Typ. Max.
100 µA
500 µA
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
1.25 1.6 V
1.1 1.3 V
0.9 1.1 V
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
25 50
µA
13 V
3.3 V
3.6 V
3.9 V
2.4 V
2.7 V
3.0 V
6.0 V
8.0 V
10 V
12 V
5.0 V
6.0 V
7.0 V
8.0 V
500
1000
15 25 pF
250 1000 ns
250 1000 ns
50 µA
1.7 2.0 V
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
5 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570


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Part NumberDescriptionMFRS
JAN2001JThe function is HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS. Microsemi CorporationMicrosemi Corporation

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