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What is 71V016SA?

This electronic component, produced by the manufacturer "Integrated Device Technology", performs the same function as "3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)".


71V016SA Datasheet PDF - Integrated Device Technology

Part Number 71V016SA
Description 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
Manufacturers Integrated Device Technology 
Logo Integrated Device Technology Logo 


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3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016SA
Features
x 64K x 16 advanced high-speed CMOS Static RAM
x Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 12/15/20ns
x One Chip Select plus one Output Enable pin
x Bidirectional data inputs and outputs directly
LVTTL-compatible
x Low power consumption via chip deselect
x Upper and Lower Byte Enable Pins
x Single 3.3V power supply
x Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Functional Block Diagram
Output
OE Enable
Buffer
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputs and outputs of the IDT71V016 are LVTTL-compatible and operation
is from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
A0 – A15
Address
Buffers
Chip
CS Enable
Buffer
Write
WE Enable
Buffer
BHE
BLE
Byte
Enable
Buffers
©2000 Integrated Device Technology, Inc.
Row / Column
Decoders
64K x 16
Memory
Array
8
Sense
16 Amps
and
Write
Drivers
8
High
Byte
I/O
Buffer
Low
Byte
I/O
Buffer
I/O15
8
I/O8
I/O7
8
I/O0
3834 drw 01
JUNE 2002
1
DSC-3834/06

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71V016SA equivalent
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
71V016SA10(2)
71V016SA12
71V016SA15
71V016SA20
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC Read Cycle Time
10 ____ 12 ____ 15 ____ 20 ____ ns
tAA Address Access Time
____ 10 ____ 12 ____ 15 ____ 20 ns
tACS Chip Select Access Time
____ 10 ____ 12 ____ 15 ____ 20 ns
tCLZ(1)
Chip Select Low to Output in Low-Z
4 ____ 4 ____ 5 ____ 5 ____ ns
tCHZ(1)
tOE
tOLZ(1)
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
____ 5 ____ 6 ____ 6 ____ 8 ns
____ 5 ____ 6 ____ 7 ____ 8 ns
0 ____ 0 ____ 0 ____ 0 ____ ns
tOHZ(1)
tOH
tBE
tBLZ(1)
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
____ 5 ____ 6 ____ 6 ____ 8 ns
4 — 4 — 4 — 4 — ns
— 5 — 6 — 7 ____ 8 ns
0 ____ 0 ____ 0 ____ 0 ____ ns
tBHZ(1)
Byte Enable High to Output in High-Z
WRITE CYCLE
tWC Write Cycle Time
tAW Address Valid to End of Write
tCW Chip Select Lo w to End of Write
tBW Byte Enable Lo w to End of Write
tAS Address Set-up Time
tWR Ad dress Hold from End of Write
tWP Write Pulse Width
tDW Data Valid to End of Write
tDH Data Hold Time
tOW(1) Write Enable High to Output in Low-Z
____ 5 ____ 6 ____ 6 ____ 8 ns
10 ____
7 ____
7 ____
7 ____
0 ____
0 ____
7 ____
5 ____
0 ____
3 ____
12 ____
8 ____
8 ____
8 ____
0 ____
0 ____
8 ____
6 ____
0 ____
3 ____
15 ____
10 ____
10 ____
10 ____
0 ____
0 ____
10 ____
7 ____
0 ____
3 ____
20 ____ ns
12 ____ ns
12 ____ ns
12 ____ ns
0 ____ ns
0 ____ ns
12 ____ ns
9 ____ ns
0 ____ ns
3 ____ ns
tWHZ(1)
Write Enable Low to Output in High-Z
____ 5 ____ 6 ____ 6 ____ 8 ns
NOTES:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. 0°C to +70°C temperature range only.
3834 tbl 10
Timing Waveform of Read Cycle No. 1(1,2,3)
tRC
ADDRESS
tOH
DATAOUT
PREVIOUS DATAOUT VALID
NOTES:
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. OE, BHE, and BLE are LOW.
tAA
tOH
DATAOUT VALID
3834 drw 06
6.452


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Featured Datasheets

Part NumberDescriptionMFRS
71V016SAThe function is 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit). Integrated Device TechnologyIntegrated Device Technology

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