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Número de pieza | DWA010 | |
Descripción | Ultrahigh-Speed Switching Diode | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DWA010 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
• Ideally suited for use in hybrid ICs because of ultrasmall package.
• High switching speed.
• Small interterminal capacitance.
Absolute Maximum Ratings at Ta=25°C
Peak Reverse Voltage
VRM
Reverse Voltage
VR
Peak Forward Current
IFM
IFM *
Average Rectified Current
Io
Io *
Surge Forward Current
IFSM
1µ s
IFSM *
Allowable Power Dissipation P
Junction Temperature
Tj
Storage Temperature
Tstg
* : Total value
85
80
300
450
100
150
4
6
200
125
–55 to +125
unit
V
V
mA
mA
mA
mA
A
A
mW
°C
°C
Electrical Characteristics at Ta=25°C
min typ max
Forward Voltage
VF1 IF=1mA
0.61
VF2 IF=10mA
0.74
VF3 IF=100mA
1.20
Reverse Current
IR1 VR=30V
0.1
IR2 VR=80V
0.5
Interterminal Capacitance
C
VR=0V, f=1MHz
Reverse Recovery Time
trr IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
2.0
4.0
Marking : W8
unit
V
V
V
µA
µA
pF
ns
Reverse Recovery Time Test Circuit
Package Dimensions 1164A
(unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet DWA010.PDF ] |
Número de pieza | Descripción | Fabricantes |
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