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PDF DU2880 Data sheet ( Hoja de datos )
| Número de pieza | DU2880 | |
| Descripción | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V
2 - 175 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
DU2880T
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
I Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source LeakageCurrent
Gate Threshold Voltage
ForwardTransconductance
InputCapacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
at 25°C
1 Symbol 1 Min 1 Max ( Units 1
Test Conditions
BVDSS
65
-
V V,,=O.O V, 1,,=20.0 mA
‘DSS
4.0 mA V,,=28.0 V, V,,=O.O V
‘GSS
4.0 pA v,,=20.0 v, v,,=o.o v
V GSITHI
2.0
6.0
V V&O.0 V, 1,,=400.0 mA
GM 2.0 - S v,,=lo.o V, 1,,=4.0 A, AV,,=l .O V, 80 us Pulse
C ISS
180 pF V,,=28.0 V, F=l .O MHz
C ass
160 pF V,,=28.0 V, F=l .O MHz
%s - 32 PF V,,=28.0 V, F=l .O MHz
GP 13 - dB V,,=28.0 V, I,,=400 mA, P,,=80.0 W, F=175 MHz
% 60 - % V,,=28.0 V. I,,=400 mA, P,,=80.0 W, F=175 MHz
VSWR-T
- 3O:l - V,,=28.0 V, I,,=400 mA, P,,,r=80.0 W, F=175 MHz
Specifications Subject to Change Without Notice.
North America:
Tel. (BOO) 366-2266
Fax (800) 618-8883
n Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
M/A-COM, inc.
n Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DU2880.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DU2880 | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | Tyco Electronics |
| DU2880 | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | Tyco Electronics |
| DU2880T | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | Tyco Electronics |
| DU2880U | RF MOSFET Power Transistor/ 8OW/ 28V 2 - 175 MHz | Tyco Electronics |
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