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What is 2SD2345?

This electronic component, produced by the manufacturer "Panasonic Semiconductor", performs the same function as "Silicon NPN epitaxial planer type(For low-frequency amplification)".


2SD2345 Datasheet PDF - Panasonic Semiconductor

Part Number 2SD2345
Description Silicon NPN epitaxial planer type(For low-frequency amplification)
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 


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Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
50
40
15
400
100 nA
1 µA
V
V
V
2000
0.05 0.2
V
120 MHz
*hFE Rank classification
Rank
R
S
T
hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SD2345 electronic component.


Information Total 2 Pages
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