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PDF 2SD1979 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1979 | |
| Descripción | Silicon NPN epitaxial planer type(For low-voltage output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD1979 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SD1979
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s Features
q Low ON resistance Ron.
q High foward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
20
25
500
300
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3W
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
ICBO
IEBO
VCEO
hFE*1
VCE(sat)
VBE
VCB = 50V, IE = 0
VEB = 25V, IC = 0
IC = 1mA, IB = 0
VCE = 2V, IC = 4mA
IC = 30mA, IB = 3mA
VCE = 2V, IC = 4mA
1 µA
1 µA
20 V
500 2500
0.1 V
0.6 V
Transition frequency
Collector output capacitance
ON resistanse
fT
Cob
Ron*2
VCB = 6V, IE = –4mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
80 MHz
4.5 pF
1.0 Ω
*1hFE Rank classification
Rank
ST
hFE
Marking Symbol
500 ~ 1500 800 ~ 2500
3WS
3WT
*2Ron Measurement circuit
1kΩ
IB=1mA
VB VV VA
Ron=
VB
VA–VB
!1000(Ω)
f=1kHz
V=0.3V
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1979.PDF ] | |
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