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What is 2SC5200?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)".


2SC5200 Datasheet PDF - Toshiba Semiconductor

Part Number 2SC5200
Description NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
230
230
5
15
1.5
150
150
55 to 150
Electrical Characteristics (Tc = 25°C)
http://www.DataSheet4U.net/
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 230 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VCE = 5 V, IC = 7 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
― ― 5.0 µA
― ― 5.0 µA
230
V
55 160
35 60
0.4 3.0
V
1.0 1.5
V
30 MHz
200
pF
1 2004-07-07
datasheet pdf - http://www.DataSheet4U.net/


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC5200 electronic component.


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1. NPN Transistor, 230V - Toshiba

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