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PDF 4AK27 Data sheet ( Hoja de datos )
| Número de pieza | 4AK27 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 4AK27 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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4AK27
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
ADE-208-728 (Z)
1st. Edition
January 1999
3
D
4
5
D
6
7
D
8
9
D
1 2 3 4 5 6 7 8 9 10
2G G G G
1, 10.
Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
5A
0.6
0.4
2A
0.2 I D = 1 A
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
4AK27
Static Drain to Source State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
4V
0.1 VGS = 10 V
0.05
0.1 0.2 0.5 1 2
5 10 20
Drain Current I D (A)
50
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
2A
ID=5A
1A
0.2 VGS = 4 V
5A 1A
0.1 10 V
2A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
V DS = 10 V
10 Pulse Test
5
2 Tc = –25 °C
25 °C
75 °C
1
0.5
0.1
0.2 0.5 1 2
5
Drain Current I D (A)
10
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 4AK27.PDF ] | |
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