5M0365R Datasheet PDF - Fairchild Semiconductor
Part Number | 5M0365R | |
Description | Fairchild Power Switch(FPS) | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
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KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
Internal Block Diagram
1
1. GND 2. Drain 3. VCC 4. FB
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5μA
7.5V
27V
OSC
9V
1mA
S
Q
R
2.5R
1R
−
+
L.E.B
0.1V
+
−
+ Thermal S/D
S
Q
R
−
OVER VOLTAGE S/D
Power on reset
©2003 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
#1 GND
Rev.1.0.7
|
|
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
KA5X03XX-SERIES
10 VGS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
1
@Notes:
1. 300μ s Pulse Test
2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage [V]
Figure 1. Output Characteristics
10
1 150oC
25 oC
-25oC
@Notes:
1. VDS = 30V
2. 300μ s Pulse Test
0.1
2468
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
7
6
5 Vgs=10V
4
Vgs=20V
3
2
@ Note : Tj=25℃
1
0
012345
ID,Drain Current [A]
Figure 3. On-Resistance vs. Drain Current
1
0.1 150 oC 25 oC
@Notes :
1. VGS = 0V
2. 300μ s Pulse Test
0.01
0.4
0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
1.2
700
600
500 Ciss
400
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
200
100
0
100
Coss
Crss
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
10
VDS=130V
8 VDS=320V
VDS=520V
6
4
2
@Note : ID=3.0A
0
0 5 10 15 20
QG,Total Gate Charge [nC]
Figure 6. Gate Charge vs. Gate-Source Voltage
25
5
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Information | Total 15 Pages | |
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