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PDF FMMT458 Data sheet ( Hoja de datos )
| Número de pieza | FMMT458 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* 400 Volt VCEO
COMPLEMENTARY TYPE FMMT558
PARTMARKING DETAIL 458
FMMT458
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400 V
Collector-Emitter Voltage
VCEO
400 V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC 225 mA
Peak Pulse Current
ICM 1 A
Base Current
IB 200 mA
Power Dissipation at Tamb=25°C Ptot 500 mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400
V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
100 nA
100 nA
100 nA
0.2 V
0.5 V
0.9 V
VCB=320V
VCE=320V
VEB=4V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.9 V
IC=50mA, VCE=10V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE 100
100 300
15
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
fT 50
MHz
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
5 pF VCB=20V, f=1MHz
Switching times
ton
135 Typical
ns
IC=50mA, VCC=100V
toff
2260 Typical ns
IB1=5mA, IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 112
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT458.PDF ] | |
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