AU5517D Datasheet PDF - NXP Semiconductors
| Part Number | AU5517D | |
| Description | Dual operational transconductance amplifier | |
| Manufacturers | NXP Semiconductors | |
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INTEGRATED CIRCUITS
NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03
2002 Dec 06
Philips
Semiconductors
|
| |
 
Philips Semiconductor
Dual operational transconductance amplifier
Product data
NE5517/NE5517A/
AU5517
DC ELECTRICAL CHARACTERISTICS1
SYMBOL
PARAMETER
TEST CONDITIONS
AU5517/NE5517
Min Typ Max
NE5517A
Min Typ Max
UNIT
VOS
VOS
IOS
IBIAS
gM
Input offset voltage
∆VOS/∆T
VOS including diodes
Input offset change
Input offset current
∆IOS/∆T
Input bias current
∆IB/∆T
Forward transconductance
Over temperature range
IABC 5 µA
Avg. TC of input offset voltage
Diode bias current (ID) = 500 µA
5 µA ≤ IABC ≤ 500 µA
Avg. TC of input offset current
Over temperature range
Avg. TC of input current
Over temperature range
6700
5400
0.4
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
5
5
5
0.6
5
8
1300
7700
4000
0.4
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
2
5
2
2
3
0.6
5
7
1200
mV
mV
mV
µV/°C
mV
mV
µA
µA/°C
µA
µA
µA/°C
µmho
µmho
IOUT
VOUT
ICC
CMRR
gM tracking
Peak output current
Peak output voltage
Positive
Negative
Supply current
VOS sensitivity
Positive
Negative
Common-mode rejection
ration
RL = 0, IABC =5 µA
RL = 0, IABC = 500 µA
RL = 0
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
IABC = 500 µA, both channels
∆ VOS/∆ V+
∆ VOS/∆ V–
0.3
5
350 500 650
300
+12 +14.2
–12 –14.4
2.6
4
20 150
20 150
80 110
0.3
35
7
350 500 650
300
+12 +14.2
–12 –14.4
2.6
4
20 150
20 150
80 110
dB
µA
µA
µA
V
V
mA
µV/V
µV/V
dB
Common-mode range
Crosstalk
Referred to input2
20 Hz < f < 20 kHz
±12 ±13.5
100
±12 ±13.5
100
V
dB
IIN Differential input current
IABC = 0, input = ±4 V
0.02 100
0.02 10
nA
Leakage current
IABC = 0 (Refer to test circuit)
0.2 100
0.2 5
nA
RIN Input resistance
10 26
10 26
kΩ
BW Open-loop bandwidth
2 2 MHz
SR Slew rate
Unity gain compensated
50
50 V/µs
INBUFFER Buffer input current
5
0.4 5
0.4 5
µA
VOBUFFER Peak buffer output voltage 5 10
10
V
∆VBE of buffer
Refer to Buffer VBE test circuit 3
0.5 5
0.5 5
mV
NOTES:
1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to –VS and the input of the buffer is
connected to the transconductance amplifier output.
3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA.
2002 Dec 06
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AU5517D electronic component. |
| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AU5517D.PDF Datasheet ] | |
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