Datasheet EPC1064V Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	EPC1064V	Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices Configuration Devices for ® ACEX, APEX, FLEX & Mercury Devices Data Sheet March 2001, ver. 11 Features s s s s s s s s Serial device family for configuring ACEXTM, APEXTM (including APEX 20K, APEX 20KC, and APEX 20KE), FLEX® (FLEX 10KE and FLEX 10KA), and MercuryTM devices Easy-to-use 4-p	Altera Corporation	data
2	EPC1064V	Configuration Devices Configuration Devices for ® SRAM-Based LUT Devices Data Sheet December 2002, ver. 12.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Serial device family for configuring APEXTM II, APEX 20K (including APEX 20K, APEX 20KC, and APEX 20KE), MercuryTM, ACEX® 1K, and FLEX® (FLEX 6000, FLEX 10KE, a	Altera Corporation	data

EPC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	EPC1	Configuration Devices Configuration Devices for ® SRAM-Based LUT Devices Data Sheet December 2002, ver. 12.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Serial device family for configuring APEXTM II, APEX 20K (including APEX 20K, APEX 20KC, and APEX 20KE), MercuryTM, ACEX® 1K, and FLEX® (FLEX 6000, FLEX 10KE, a	Altera Corporation	data
2	EPC10	EPC Cores 68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 DIMENSIONS CORES EPC10 EPC10A EPC12.6 EPC13 EPC13A EPC13C EPC14.5 EPC17 EPC18 EPC19 EPC19A EPC19B EPC19.5 EPC19.6 EPC19.6/30 EPC20 EPC21.9 EPC25 EPC25	ACME	data
3	EPC1001	Enhancement Mode Power Transistor DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A EPC1001 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN�	EPC	transistor
4	EPC1005	Enhancement Mode Power Transistor DATASHEET EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS(ON) , 7 mW ID , 25 A EPC1005 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN�	EPC	transistor
5	EPC1007H	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1007P & EPC1007H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
6	EPC1007P	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1007P & EPC1007H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
7	EPC1008H	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1008P & EPC1008H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
8	EPC1008P	Ethernet DC/DC Converter Ethernet DC/DC Converter EPC1008P & EPC1008H Features 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Input / Output Isolation Input filter to reduce input ripple current Designed for low common mode noise Electrical Specifications PCA P/N EPC10	PCA Electronics	converter
9	EPC1009	Enhancement Mode Power Transistor DATASHEET EPC1009 – Enhancement Mode Power Transistor VDSS , 60 V RDS(ON) , 30 mW ID , 6 A EPC1009 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN�	EPC	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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