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FDB6670AL Datasheet PDF - Fairchild Semiconductor

Part Number FDB6670AL
Description N-Channel Logic Level PowerTrenchTM MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 



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FDB6670AL datasheet, circuit
July 1998
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Features
80
A,
30
V.
RDS(ON) = 0.0065
RDS(ON) = 0.0085
@
VGS=10
@ VGS=
V,
4.5
V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High performance trench technology for extremely low
RDS(ON).
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
FDP6670AL
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
(Note 1)
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
30
±20
80
240
75
0.5
-65 to 175
275
FDB6670AL
2
62.5
© 1998 Fairchild Semiconductor Corporation
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
FDP6670AL Rev.C

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