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PDF FD1000FH-56 Data sheet ( Hoja de datos )
| Número de pieza | FD1000FH-56 | |
| Descripción | HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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FD1000FH-56
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FH-56
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
R4
9
‘38
CATHODE
φ 50
q IF(AV) Average forward current ......................1000A
q VRRM Repetitive peak reverse voltage ....... 2500V, 2800V
q QRR Reverse recovery charge ................. 1000µC
q Press pack type
TYPE
NAME
ANODE
φ 50
φ 92 MAX
M5 × 0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
50
2500
2800
2000
Voltage class
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 79°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 29.4
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 2500A, Instantaneous measurement
IFM = 1000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
56
2800
3100
2240
Ratings
1570
1000
25
2.6 × 105
–40 ~ +125
–40 ~ +150
26.5 ~ 35.3
Unit
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
——
80 mA
——
1.9 V
— — 1000 µC
— — 0.025 °C/W
Aug.1998
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FD1000FH-56.PDF ] | |
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