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Número de pieza | FC152 | |
Descripción | High-Frequency Amp/ Differential Amp Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FC152 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordering number:EN4653
FC152
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Differential Amp
Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC152 is formed with two chips, being equiva-
lent to the 2SC4270, placed in one package.
· Excellent in thermal equilibrium, pair capability and
especially suited for differerntial amp.
Package Dimensions
unit:mm
2104A
[FC152]
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
Gain-Bnadwidth Product
Output Capacitance
Power Gain
Noise Figure
ICBO
IEBO
hFE
hFE(small/
large)
VBE(large-
small)
fT
Cob
PG
NF
VCB=20V, IE=0
VEB=2V, IC=0
VCE=10V, IC=5mA
VCE=10V, IC=5mA
VCE=10V, IC=0
VCE=10V, IC=10mA
VCB=10V, f=1MHz
VCE=10V, IC=10mA, f=0.9GHz
VCE=10V, IC=3mA, f=0.9GHz
Ratings
25
15
3
50
200
300
150
–55 to +150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Ratings
min typ
60
0.7 0.95
max
0.1
10
200
Unit
µA
µA
3.0 10 mV
1.5 3.0
GHz
0.7 1.0 pF
12 dB
3.0 dB
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and VBE(large-small) are for pair capability
Marking:152
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FC152.PDF ] |
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