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PDF FC150 Data sheet ( Hoja de datos )
| Número de pieza | FC150 | |
| Descripción | Low-Frequency General-Purpose Amp/ Driver Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN3965
FC150
PNP/NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
Driver Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC150 is formed with two chips, being equiva-
lent to the 2SA1813/2SC4413, placed in one pack-
age.
· Adoption of FBET process.
· High DC current gain.
· Hgih VEBO.
Electrical Connection
Package Dimensions
unit:mm
2067
[FC150]
TR1=PNP
TR2=NPN
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(–20V)40V, IE=0
VEB=(–)10V, IC=0
VCE=(–)5V, IC=(–)1mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)50mA, IB=(–)1mA
IC=(–)50mA, IB=(–)1mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IC=(–)10µA, IC=0
Note:The specifications shown above are for each individual transistor.
( ):PNP
Marking:150
Ratings
(–30)60
(–25)50
(–)15
(–150)100
(–300)200
(–30)20
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
mW
˚C
˚C
min
(500)800
(–30)60
(–25)50
(–)15
Ratings
typ max
–0.1
–0.1
(800)1500 (1200)3200
(210)200
(2.6)1.5
(–0.15)0.1
(–)0.3
(–0.78)0.8
(–)1.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/12094TH (KOTO) 8-7600 No.3965-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FC150.PDF ] | |
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