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Número de pieza | FC135 | |
Descripción | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FC135 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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FC135
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistance (R1=4.7kΩ)).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC135 is formed with two chips, being equiva-
lent to the 2SA1510, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC135]
Electrical Connection
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=–40V, IE=0
VEB=–5V, IC=0
VCE=–5V, IC=–10mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
IC=–10mA, IB=–0.5mA
IC=–10µA, IE=0
IC=–100µA, RBE=∞
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–10mA
Note:The specifications shown above are for each individual transistor.
Marking:135
Ratings
Unit
–50
–50
–5
–100
–200
200
300
150
–55 to +150
V
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
100
–50
–50
–0.4
–0.6
3.3
200
5.1
–0.1
–0.55
–1.0
4.7
max
–0.1
–0.1
–0.3
–0.8
–2.0
6.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
kΩ
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3289-1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet FC135.PDF ] |
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