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What is FC112?

This electronic component, produced by the manufacturer "Sanyo Semicon Device", performs the same function as "NPN Epitaxial Planar Silicon Composite Transistor Switching Applications".


FC112 Datasheet PDF - Sanyo Semicon Device

Part Number FC112
Description NPN Epitaxial Planar Silicon Composite Transistor Switching Applications
Manufacturers Sanyo Semicon Device 
Logo Sanyo Semicon Device Logo 


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Ordering number:EN3080
FC112
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
· On-chip bias resistors (R1=22k, R2=22k)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC112 is formed with two chips, being equiva-
lent to the 2SC3396, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC112]
Electrical Connection
C1:Collerctor1
C2:Collerctor2
B2:Base2
EC:Emitter Common
B1:Base1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
50
50
10
100
200
200
300
150
–55 to+150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
R1/R2
VCB=40V, IE=0
VCE=40V, IB=0
VEB=5V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
IC=10mA. IB=0.5mA
IC=10µA, IE=0
IC=100µA, RBE=
VCE=5V, IC=100µA
VCE=0.2V, IC=5mA
Note: The specifications shown above are for each individual transistor.
Marking:112
Ratings
min typ
70 113
50
250
3.3
0.1
50
50
0.8 1.1
1.0 1.9
15 22
0.9 1.0
max
0.1
0.5
160
0.3
1.5
3.0
29
1.1
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3080-1/2


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FC112 electronic component.


Information Total 2 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
FC11The function is Low-Frequency General-Purpose Amp/ Differential Amp Applications. Sanyo Semicon DeviceSanyo Semicon Device
FC110The function is NPN Epitaxial Planar Silicon Composite Transistor Switching Applications. Sanyo Semicon DeviceSanyo Semicon Device
FC111The function is PNP Epitaxial Planar Silicon Composite Transistor Switching Applications. Sanyo Semicon DeviceSanyo Semicon Device

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