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What is FK10KM-9?

This electronic component, produced by the manufacturer "Mitsubishi Electric Semiconductor", performs the same function as "HIGH-SPEED SWITCHING USE".


FK10KM-9 Datasheet PDF - Mitsubishi Electric Semiconductor

Part Number FK10KM-9
Description HIGH-SPEED SWITCHING USE
Manufacturers Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor Logo 


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FK10KM-9
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.92
¡ID ......................................................................................... 10A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
450
±30
10
30
10
30
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
g
Feb.1999

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FK10KM-9 equivalent
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
55
IS = 10A
3 VGS = 0V 3
2
trr
VDD = 250V 2
102 101
77
55
3
2
101
7
5
101
Irr
23
5 7 102
3
2
Tch = 25°C 100
Tch = 150°C 7
5
2 3 5 7 103
SOURCE CURRENT dis/dt (–A/µs)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
103
7
5
dis/dt = –100A /µs
VGS = 0V
VDD = 250V
102
7
5
33
22
102 trr
7
5
Irr
3
2
101
100 2 3
5 7 101
101
7
5
3
Tch = 25°C 2
Tch = 150°C
100
2 3 5 7 102
SOURCE CURRENT IS (A)
101
7
5 D=1
3
2
0.5
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
100 0.2
7
5 0.1
3
2
PDM
10–1
7
5
0.05
0.02
0.01
3
2
Single Pulse
tw
T
D=
tw
T
10–2
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FK10KM-9 electronic component.


Information Total 5 Pages
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