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FJV3101R Datasheet PDF - Fairchild Semiconductor

Part Number FJV3101R
Description NPN Epitaxial Silicon Transistor
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

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FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7K, R2=4.7K)
• Complement to FJV4101R
Marking
R21
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=10µA, IE=0
IC=100µA, IB=0
VCB=40V, IE=0
VCE=5V, IC=10mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
VCB=10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE=5V, IC=100µΑ
VCE=0.3V, IC=20mA
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
C
R1
B
R2
Value
50
50
10
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
50
50
20
0.5
3.2
0.9
Typ.
250
3.7
4.7
1
Max.
0.1
Units
V
V
µA
0.3 V
MHz
pF
V
3V
6.2 K
1.1
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002



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