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PDF FJN5471 Data sheet ( Hoja de datos )
| Número de pieza | FJN5471 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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FJN5471
For Output Amplifier of Electronic Flash Unit
• High DC Currrent Gain
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
40
20
7
5
0.75
150
-55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Collector-Emitter Voltage
Emitter Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Band Width Product
Collector Output Capacitance
IC=1mA, IB=0
IC=100µA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
IC=3A, IB=0.1A
IC=3A, IB=0.1A
VCE=6V, IC=50mA
VCB=20V, IE=0, f=1MHz
Min.
20
7
700
Typ.
1000
150
25
Max.
0.1
0.1
Units
V
V
µA
µA
0.5 V
1.5 V
MHz
pF
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjA Thermal Resistance, Junction to Ambient
Max Units
165 °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
1 page  
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2000 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, August 2002
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FJN5471.PDF ] | |
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