FJC1386 Datasheet PDF - Fairchild Semiconductor
Part Number | FJC1386 | |
Description | PNP Epitaxial Silicon Transistor | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
There is a preview and FJC1386 download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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Low Saturation Transistor
Medium Power Amplifier
• Complement to FJC2098
• High Collector Current
• Low Collector-Emitter Saturation Voltage
1 SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, VB=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
IC=-4, IB=-0.1A
IC=-4, IB=-0.1A
Min.
-30
-20
-6
80
Typ.
Max.
-0.5
-0.5
390
-1.0
-1.5
Units
V
V
V
µA
µA
V
V
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjA Thermal Resistance, Junction to Ambient
Max Units
250 °C/W
hFE Classification
Classification
hFE
P
80 ~ 180
Marking
Q
120 ~ 270
R
180 ~ 390
FAP
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FJC1386 electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FJC1386.PDF Datasheet ] |
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