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Datasheet FJA4310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FJA4310 | NPN Epitaxial Silicon Transistor FJA4310
FJA4310
Audio Power Amplifier
• • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC I |  Fairchild Semiconductor | transistor |
FJA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FJA13009 | Silicon NPN triple diffusion planar transistor(High voltage switching transistor) SEMICONDUCTOR
FJA13009
Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W
5 . 0 ±0 . 2
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0
TO-3P(B)
20.0 min
FEATURES
High-speed switching High collector to base voltage VCBO Satisfactory linearit  NELL SEMICONDUCTOR transistor | | |
| 2 | FJA13009 | High Voltage Switch Mode Applications FJA13009
FJA13009
High Voltage Switch Mode Applications
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TST Fairchild Semiconductor data | | |
| 3 | FJA13009 | High Voltage Switch Mode Applications FJA13009
FJA13009
High Voltage Switch Mode Applications
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TST Fairchild Semiconductor data | | |
| 4 | FJA13009 | High Voltage Switch Mode Applications FJA13009
FJA13009
High Voltage Switch Mode Applications
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TST Fairchild Semiconductor data | | |
| 5 | FJA3835 | Power Amplifier FJA3835
FJA3835
Power Amplifier
• High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collect Fairchild Semiconductor amplifier | | |
| 6 | FJA4210 | PNP Epitaxial Silicon Transistor FJA4210
FJA4210
Audio Power Amplifier
• • • • High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310
1
TO-3P
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC Fairchild Semiconductor transistor | | |
| 7 | FJA4310 | NPN Epitaxial Silicon Transistor FJA4310
FJA4310
Audio Power Amplifier
• • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC I Fairchild Semiconductor transistor | |
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