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What is FGC4000BX-90DS?

This electronic component, produced by the manufacturer "Mitsubishi Electric Semiconductor", performs the same function as "HIGH POWER INVERTER USE PRESS PACK TYPE".


FGC4000BX-90DS Datasheet PDF - Mitsubishi Electric Semiconductor

Part Number FGC4000BX-90DS
Description HIGH POWER INVERTER USE PRESS PACK TYPE
Manufacturers Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor Logo 


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FGC4000BX-90DS
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC4000BX-90DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
φ134 ± 0.4
+0.2
16-φ4.5 0
22.5° ± 0.5°
M3!0.5 2.5DEPTH
(4
+
0
0.3
)
φ147 ± 0.4 NOTE1
φ85 ± 0.2
q ITQRM Repetitive controllable on-state current ........... 4000A
q IT(AV) Average on-state current .....................1200A
q VDRM Repetitive peak off state voltage ................... 4500V
q Anode short type
φ85 ± 0.2
φ120MAX
(φ127)
φ3.5 ± 0.2 2.2 ± 0.2DEPTH
APPLICATION
Inverters, DC choppers, Induction heaters, DC to DC converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
VLTDS
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
Long term DC stability voltage+
+ : VGK = –2V
Voltage class
90DS
21
21
21
4500
4500
3600
3000
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
(Snubberless)
VDM = 4500V, VD = 2250V, LC = 0.2µH, VRG = 21V
diGQ/dt = 6000A/µs. Tj = 25/125°C
Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, Tf = 70°C
One half cycle at 60Hz, Tj = 125°C
VD = 2250V, ITM = 4000A, IGM= 200A, Tj= 125°C
diG/dt = 100A/µs (Snubberless)
(Recommended value 40kN)
Typical value
Ratings
4000
1880
1200
25
2.6 × 106
1000
10
21
1000
4000
10
120
200
6300
–20 ~ +125
–20 ~ +150
32 ~ 48
1500
Unit
V
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
kW
kW
W
W
°C
°C
kN
g
Aug.1998


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FGC4000BX-90DS electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
FGC4000BX-90DSThe function is HIGH POWER INVERTER USE PRESS PACK TYPE. Mitsubishi Electric SemiconductorMitsubishi Electric Semiconductor

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