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What is 3SK194?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Silicon N-Channel Dual Gate MOS FET".


3SK194 Datasheet PDF - Hitachi Semiconductor

Part Number 3SK194
Description Silicon N-Channel Dual Gate MOS FET
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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Total 9 Pages



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3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain

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3SK194 equivalent
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
30
VDS = 6 V
f = 1 kHz
24
18
3
12
2.5
62
1.5
1
0 0.5
–1 0 1 2 3 4
Gate 1 to Source Voltage VG1S (V)
Power Gain vs. Drain Current
20
16
12
8
4 VDS = 6 V
VG2S = 3 V
f = 900 MHz
0 4 8 12 16 20
Drain Current ID (mA)
3SK194
Power Gain vs. Drain Current
50
VDS = 6 V
VG2S = 3 V
40 f = 200 MHz
30
20
10
0 4 8 12 16 20
Drain Current ID (mA)
Power Gain vs. Drain to Source Voltage
50
VG2S = 3 V
ID = 10 mA
40 f = 200 MHz
30
20
10
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 3SK194 electronic component.


Information Total 9 Pages
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Download [ 3SK194.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
3SK194The function is Silicon N-Channel Dual Gate MOS FET. Hitachi SemiconductorHitachi Semiconductor
3SK195The function is N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER /FM TUNER APPLICATIONS). Toshiba SemiconductorToshiba Semiconductor
3SK199The function is N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS). Toshiba SemiconductorToshiba Semiconductor

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