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PDF 2SK3377 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3377 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3377
PACKAGE
TO-251
FEATURES
• Low On-state Resistance
5 RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
5 RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
5 • Low Ciss : Ciss = 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
2SK3377-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
5 Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±20
±50
30
1.0
150
–55 to +150
15
23
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
4.17 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14328EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3377.PDF ] | |
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