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PDF 2SK3304 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3304 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching
power supply.
ORDERING INFORMATION
PART NUMBER
2SK3304
PACKAGE
TO-3P
FEATURES
• Low gate charge :
QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
900
±30
±7
±21
130
3.0
–55 to + 150
7
147
V
V
A
A
W
W
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13992EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
2000
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5.0
4.0
3.0
2.0
1.0
0.0
−50
VGS = 10 V
ID = 4.0 A
0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
10
1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
1000
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
10
0.1
di/dt = 50 A/µs
VGS = 0 V
1 10 100
IF - Drain Current - A
2SK3304
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
1
VGS = 10 V
VGS = 0 V
0.1
0.0
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
tf
td(off)
td(on)
10
tr
1
0.1
1 10
ID - Drain Current - A
VDD = 150 V
VGS = 10 V
RG = 10 Ω
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
ID = 7.0 A
14
600
VDD = 450 V
300 V
150 V
400
12
VGS 10
8
6
200 4
VDS 2
0
10 20 30
40 50
600
QG - Gate Charge - nC
Data Sheet D13992EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3304.PDF ] | |
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