(PDF) 2SK3211S Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3211S
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source ADE-208-761A (Z) 2nd. Edition February 1999 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 Pulse Test 2.0 1.5 1.0 I D = 15 A 10 A 0.5 5A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) 2SK3211 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 VGS = 4 V 50 10 V 20 10 12 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 150 5,10,15 A 100 V GS = 4 V 5,10,15 A 50 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 Tc = –25 °C 20 25 °C 75 °C 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF 2SK3211S Data sheet ( Hoja de datos )