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2SK3211S Datasheet PDF - Hitachi Semiconductor

Part Number 2SK3211S
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 



Preview ( 10 pages )
		
2SK3211S datasheet, circuit
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 60 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
ADE-208-761A (Z)
2nd. Edition
February 1999

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1 page
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2SK3211S equivalent
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0 I D = 15 A
10 A
0.5
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK3211
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100 VGS = 4 V
50 10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150 5,10,15 A
100 V GS = 4 V
5,10,15 A
50
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20 25 °C
75 °C
10
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5

5 Page
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Information Total 10 Pages
Download[ 2SK3211S.PDF Datasheet ]

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