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What is 2SK3211?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


2SK3211 Datasheet PDF - Hitachi Semiconductor

Part Number 2SK3211
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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Total 10 Pages



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No Preview Available ! 2SK3211 datasheet, circuit

2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 60 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
ADE-208-761A (Z)
2nd. Edition
February 1999

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2SK3211 equivalent
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0 I D = 15 A
10 A
0.5
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK3211
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100 VGS = 4 V
50 10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150 5,10,15 A
100 V GS = 4 V
5,10,15 A
50
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20 25 °C
75 °C
10
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK3211 electronic component.


Information Total 10 Pages
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Download [ 2SK3211.PDF Datasheet ]

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