2SK3211 Datasheet PDF - Hitachi Semiconductor
Part Number | 2SK3211 | |
Description | Silicon N Channel MOS FET High Speed Power Switching | |
Manufacturers | Hitachi Semiconductor | |
Logo | ||
There is a preview and 2SK3211 download ( pdf file ) link at the bottom of this page. Total 10 Pages |
Preview 1 page No Preview Available ! 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 60 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
ADE-208-761A (Z)
2nd. Edition
February 1999
|
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0 I D = 15 A
10 A
0.5
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK3211
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100 VGS = 4 V
50 10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150 5,10,15 A
100 V GS = 4 V
5,10,15 A
50
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20 25 °C
75 °C
10
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK3211 electronic component. |
Information | Total 10 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 2SK3211.PDF Datasheet ] |
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