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2SK3151 Datasheet PDF - Hitachi Semiconductor

Part Number 2SK3151
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 



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2SK3151 datasheet, circuit
2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 11.5 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–3P
ADE-208-747A (Z)
2nd. Edition
February 1999
D
2
1
G
1
2
33
S
1. Gate
2. Drain
(Flange)
3. Source

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1 page
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2SK3151 equivalent
2SK3151
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I DR (A)
30000
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1000
Coss
300 Crss
100
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
I D = 50 A
160 V DD = 100 V
50 V
25 V
120
VDS
VGS
80
20
16
12
8
40 V DD = 100 V
50 V
4
25 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
5000
Switching Characteristics
1000
500
t d(off)
tf
200 t r
100
50 t d(on)
20
10
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
0.5 1 2 5 10 20 50
Drain Current I D (A)
5

5 Page
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Information Total 9 Pages
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