(PDF) 2SK3151 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3151
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P ADE-208-747A (Z) 2nd. Edition February 1999 D 2 1 G 1 2 33 S 1. Gate 2. Drain (Flange) 3. Source 1 page 2SK3151 1000 500 Body–Drain Diode Reverse Recovery Time 200 100 50 20 di / dt = 50 A / µs 10 0.1 0.3 VGS = 0, Ta = 25°C 1 3 10 30 100 Reverse Drain Current I DR (A) 30000 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 1000 Coss 300 Crss 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 I D = 50 A 160 V DD = 100 V 50 V 25 V 120 VDS VGS 80 20 16 12 8 40 V DD = 100 V 50 V 4 25 V 0 0 80 160 240 320 400 Gate Charge Qg (nc) 5000 Switching Characteristics 1000 500 t d(off) tf 200 t r 100 50 t d(on) 20 10 0.1 0.2 VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% 0.5 1 2 5 10 20 50 Drain Current I D (A) 5 5 Page

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PDF 2SK3151 Data sheet ( Hoja de datos )