2SK3148 Datasheet PDF - Hitachi Semiconductor
Part Number | 2SK3148 | |
Description | Silicon N Channel MOS FET High Speed Power Switching | |
Manufacturers | Hitachi Semiconductor | |
Logo | ||
There is a preview and 2SK3148 download ( pdf file ) link at the bottom of this page. Total 9 Pages |
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Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 45 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-748A (Z)
2nd. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source
|
|
2SK3148
Body–Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200 VGS = 0, Ta = 25°C
100
50
20
10
5
2
1
0.1 0.3 1 3 10 30 50
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200 Coss
100
50
20 VGS = 0
f = 1 MHz
10
0 10 20
Crss
30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
I D = 15 A
160
VDD = 100 V
50 V
25 V
VGS
120
VDS
80
20
16
12
8
40
VDD = 100 V
4
50 V
25 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
100
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
t d(off)
tf
50
tr
20
10
0.1 0.2
t d(on)
0.5 1 2
50 10 20
Drain Current I D (A)
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK3148 electronic component. |
Information | Total 9 Pages | |
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Download | [ 2SK3148.PDF Datasheet ] |
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