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What is 2SK3148?

This electronic component, produced by the manufacturer "Hitachi Semiconductor", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


2SK3148 Datasheet PDF - Hitachi Semiconductor

Part Number 2SK3148
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 


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2SK3148
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 45 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-748A (Z)
2nd. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source

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2SK3148 equivalent
2SK3148
Body–Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200 VGS = 0, Ta = 25°C
100
50
20
10
5
2
1
0.1 0.3 1 3 10 30 50
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200 Coss
100
50
20 VGS = 0
f = 1 MHz
10
0 10 20
Crss
30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
I D = 15 A
160
VDD = 100 V
50 V
25 V
VGS
120
VDS
80
20
16
12
8
40
VDD = 100 V
4
50 V
25 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
100
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
t d(off)
tf
50
tr
20
10
0.1 0.2
t d(on)
0.5 1 2
50 10 20
Drain Current I D (A)
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK3148 electronic component.


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2SK3148 datasheet


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