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PDF 2SK3131 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3131 | |
| Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3131
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3131
Chopper Regulator DC−DC Converter and Motor Drive
Applications
Unit: mm
Fast reverse recovery time
: trr = 105 ns (typ.)
Built-in high-speed free-wheeling diode
Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.)
High forward transfer admittance : |Yfs| = 35 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
50
200
250
525
50
25
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.5
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06
1 page  
2SK3131
RG = 25 Ω
VDD = 90 V, L = 357 µH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2004-07-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3131.PDF ] | |
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