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What is 2SK30ATM?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Silicon N Channel Junction Type Transistor".


2SK30ATM Datasheet PDF - Toshiba Semiconductor

Part Number 2SK30ATM
Description Silicon N Channel Junction Type Transistor
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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2SK30ATM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and
DC-AC High Input Impedance Amplifier Circuit
Applications
Unit: mm
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Low noise: NF = 0.5 dB (typ.)
(VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS 50 V
Gate current
IG 10 mA
Drain power dissipation
PD 100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C
JEDEC
TO-92
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1C
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
Yfs
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VGS = 0, VDS = 0, f = 1 MHz
Crss
VGD = −10 V, VDS = 0, f = 1 MHz
NF VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
⎯ ⎯ −1.0 nA
50
V
0.3 6.5 mA
0.4 ⎯ −5.0 V
1.2
mS
8.2 pF
2.6 pF
0.5 5.0 dB
Note: IDSS classification R: 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50
1 2007-11-01


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK30ATM electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
2SK30ATMThe function is Silicon N Channel Junction Type Transistor. Toshiba SemiconductorToshiba Semiconductor

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