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PDF 2SK2975 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2975 | |
| Descripción | RF POWER MOS FET(VHF/UHF power amplifiers) | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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1. 2SK2975 - MOSFET, Transistor  Hay una vista previa y un enlace de descarga de 2SK2975 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MITSUBISHI RF POWER MOS FET
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK
(TOP)
FEATURES
• High power gain:Gpe≥8.4dB
@VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
3
4.9 1
2
Dimensions in mm
(BOTTOM)
2.0
3.50
t=1.2MAX
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
INDEX
MARK
LOT No.
TYPE No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch Channel dissipation
Tc=25˚C
Tj Junction temperature
Tstg Storage temperature
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14×2.8×2mm)
(Note2)
30
±20
10
175
-40 to +110
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Test conditions
IDSS
VDS=17V, VGS=0V
IGSS
VGS=10V, VDS=0V
VTH Threshold voltage
VDS=7V, IDS=1mA
Ciss VGS=10V, VDS=0V,f=1MHz
Coss
VDS=10V, VGS=0V,f=1MHz
Pout
hD
VDS=9.6V, Pin=1W,f=450MHz
Note: Above parameters,ratings,limits and conditions are subject to change.
Unit
V
V
W
˚C
˚C
Limits
Min Typ Max
10
1
1.0 1.7
45
80
78
50 55
Unit
µA
µA
V
pF
pF
W
%
Nov. ´97
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK2975.PDF ] | |
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